Thermal characterization of GaN lateral power HEMTs on Si, SOI, and poly-AlN substrates-Reference-Cited by-同舟云学术

Thermal characterization of GaN lateral power HEMTs on Si, SOI, and poly-AlN substrates

Published:2021-03 Issue: Volume:118 Page:114061
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Magnani Alessandro,Cosnier Thibault,Amirifar Nooshin,Chatterjee Urmimala,Zhao Ming,Li Xiangdong,Geens Karen,Decoutere Stefaan

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference44 articles.

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3. Half-bridge GaN power ICs: performance and application;Fichtenbaum;IEEE Power Electron. Mag.,2017

4. Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology;Reiner;IET Power Electron.,2018

5. Influence of driver integration on GaN enhancement mode transistor performance;Sun;IEEE Journal of Emerging and Selected Topics in Power Electronics,2020

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal Analysis of Packaging Solution for GaN Multi-Chip Power Micromodule;2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM);2024-06-28

2. Thermal Modeling and Layout Optimization of GaN Half-Bridge IC with Integrated Drivers and Power HEMTs;Russian Microelectronics;2024-06

3. Thermal Modelling of Monolithic Half-bridge IC with Integrated Gate Drivers and Power e-HEMT Based on GaN-on-SOI Platform;2023 IEEE XVI International Scientific and Technical Conference Actual Problems of Electronic Instrument Engineering (APEIE);2023-11-10

4. GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI;e-Prime - Advances in Electrical Engineering, Electronics and Energy;2023-06

5. Comparison of GaN Enhancement Mode Transistor Performance With Integrated and External Driver;Power Electronic Devices and Components;2022-06