Author:
Okoro Chukwudi,Jayaraman Shrisudersan,Pollard Scott
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference40 articles.
1. C. Okoro, G. Eneman, M. Gonzalez, B. Vandevelde, B. Swinnen, S. Stoukatch, E. Beyne, D. Vandepitte, “Analysis of the induced stresses in silicon during thermocompression Cu-Cu bonding of Cu-through-vias in 3D-SIC architecture,” 57th Proc., Electronics Components and Technology Conference (ECTC), June 2007, Reno, USA, pp. 249–255.
2. C. Okoro, Y. Yang, B. Vandevelde, B. Swinnen, D. Vandepitte, B. Verlinden, I. De Wolf, “Extraction of the appropriate material property for realistic modeling of through-silicon-vias using μ-raman spectroscopy,” Proc., International Interconnect Technology Conference (IITC), May 2008, San Francisco, USA, pp. 16–18.
3. A novel Cu-Cu bonding technique: the insertion bonding approach;Okoro;IEEE Trans. Electron. Packaging Manuf. Technol.,2011
4. Synchrotron-based measurement of the impact of thermal cycling on the evolution of stresses in Cu through-silicon vias;Okoro;J. Appl. Phys.,2014
5. A detailed failure analysis examination of the effect of thermal cycling on Cu TSV reliability;Okoro;IEEE Trans. Electron Dev.,2014
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