Hot-carrier-injection resilient RF power amplifier using adaptive bias-Reference-Cited by-同舟云学术

Hot-carrier-injection resilient RF power amplifier using adaptive bias

Published:2020-11 Issue: Volume:114 Page:113912
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Pazos S.M.,Aguirre F.L.,Palumbo F.,Silveira F.

Funder

UTN.BA

CONICET

MINCyT

CSIC

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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4. Hot carrier degradation: from defect creation modeling to their impact on NMOS parameters;Mamy Randriamihaja;Microelectron. Reliab.,2012

5. MOSFET small-signal model considering hot-carrier effect for millimeter-wave frequencies;Li;J. Infrared. Millimeter. Terahertz Waves,2019

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