Author:
Garros X.,Casse M.,Rafik M.,Fenouillet-Béranger C.,Reimbold G.,Martin F.,Wiemer C.,Boulanger F.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Origin of the threshold voltage instability in SiO2 /HfO2 dual layer gate dielectrics;Kerber;IEEE Electron Dev Lett,2003
2. Leroux C, Mitard J, Ghibaudo G, Garros X, Reimbold G, Martin F. Characterization and modeling of hysteresis phenomena in highk dielectrics. In: IEDM tech. dig., San Francisco; 2004. p. 737–40.
3. Effects of ALD HfO2 thickness on charge trapping and mobility;Sim;Microelectron Eng,2005
4. Neugroschel A, Bersuker G, Choi R, Cochrane C, Lenahan P, Heh D, et al. An accurate lifetime analysis methodology incorporating governing NBTI mechanisms in high-k/SiO2 gate stacks. In: IEDM tech. dig., San Francisco; 2006. p. 1–4.
5. Garros X, Besson P, Reimbold G, Loup V, Salvetat T, Rochat N, et al. Impact of crystallinity of high-k oxides on Vt instabilities of NMOS devices assessed by physical and electrical measurements. In: Proc. of the international reliability physics symposium, Phoenix; 2008. p. 330–4.
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献