A study of N-induced traps due to a nitrided gate in high-κ/metal gate nMOSFETs and their impact on electron mobility

Author:

Cassé M.,Garros X.,Weber O.,Andrieu F.,Reimbold G.,Boulanger F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Formation of an N-pair at the Si(001)/α–quartz interface;Current Applied Physics;2016-07

2. Nanowire Devices;Beyond-CMOS Nanodevices 2;2014-06-03

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