Beyond microelectronics: materials and technology for nano-scale CMOS devices-Reference-Cited by-同舟云学术

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Beyond microelectronics: materials and technology for nano-scale CMOS devices

Published:2004-08 Issue:S2 Volume:1 Page:S155-S162
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Buchanan D. A.

Publisher

Wiley

Reference60 articles.

1. Scaling the gate dielectric: Materials, integration, and reliability

2. Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering

3. The Interational Technology Roadmap for Semiconductors (ITRS 2003), 2003 update ed: Semiconductor Industry Association, 2003.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phase transition in sputtered HfO2 thin films: A qualitative Raman study;Applied Surface Science;2012-11

2. A study of N-induced traps due to a nitrided gate in high-κ/metal gate nMOSFETs and their impact on electron mobility;Solid-State Electronics;2011-11

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