Author:
Yamada Y.,Takaku Y.,Yagi Y.,Nakagawa I.,Atsumi T.,Shirai M.,Ohnuma I.,Ishida K.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference5 articles.
1. Ueda H et al. High current operation of GaN HEMTs. In: Proceeding of the 17th international symposium on power semiconductor devices & IC’s; 2005. p. 311.
2. Temperature dependence of On-state characteristics, and switching characteristics of 5kV class 4H–SiC SEJFET;Asano;IEEJ Trans IA,2005
3. Nishimura Y et al. All lead free IGBT module with excellent reliability. In: Proceedings of the 17th international symposium on power semiconductor devices & IC’s; 2005. p. 79.
4. Pb-free high temperature solders for power device packaging;Yamada;Microelectr Reliab,2006
5. Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling;Dupont;Microelectr Reliab,2006
Cited by
84 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献