Temperature dependence of On-state characteristics, and Switching characteristics of 5 kV class 4H-SiC SEJFET
Author:
Affiliation:
1. Electric Power Engineering Research Center, The Kansai Electric Power Company
2. Cree, Inc
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering,Industrial and Manufacturing Engineering
Link
http://www.jstage.jst.go.jp/article/ieejias/125/2/125_2_147/_pdf
Reference19 articles.
1. SiC Integrated MOSFETs
2. (3) Y. Sugawara and K. Asano: “1.4kV 4H-SiC UMOSFET with Low Specific On-Resistance”, Proceedings of ISPSD'98, pp. 119-122 (1998)
3. High-voltage accumulation-layer UMOSFET's in 4H-SiC
4. An 1800 V triple implanted vertical 6H-SiC MOSFET
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