Author:
Wu Ming-Jhang,Wen Hua-Chiang,Wu Shyh-Chi,Yang Ping-Feng,Lai Yi-Shao,Hsu Wen-Kuang,Wu Wen-Fa,Chou Chang-Pin
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference30 articles.
1. Electrical properties of lightly doped p-type silicon–germanium single crystals;Gaworzewski;J Appl Phys,1998
2. Modulation doping in GexSi1−x/Si strained layer heterostructures;People;Appl Phys Lett,1983
3. High hole mobility in SiGe alloys for device applications;Ismail;Appl Phys Lett,1994
4. Chidambaram PR, Smith BA, Hall LH, Bu H, Chakravarthi S, Kim Y, et al. 35% Drive current improvement from recessed-SiGe drain extensions on 37nm Gate Length PMOS. In: 2004 Symposium on VLSI technology digest of technical papers 2004; 51: p. 48–9.
5. Zhang D, Nguyen BY, White T, Goolsby B, Nguyen T, Dhandapani V, et al. Embedded SiGe S/D PMOS on thin body SOI substrate with drive current enhancement. In: 2005 Symposium on VLSI technology digest of technical papers; 2005. p. 26–7.
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献