Transparent bipolar resistive switching memory devices based on Mn doped SnO2 films-Reference-Cited by-同舟云学术

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Transparent bipolar resistive switching memory devices based on Mn doped SnO2 films

Published:2014-07 Issue: Volume:602 Page:175-179
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Wu Xinghui,Xu Zhimou,Zhao Fei,Xu Xiaohua,Liu Binbing,Sun Tangyou,Liu Sisi,Zhao Wenning,Ma Zhichao

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference32 articles.

1. Memristive devices for computing

2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

4. All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature

5. Resistive Switching Characteristics of Solution-Processed Transparent TiO[sub x] for Nonvolatile Memory Application

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1. Study of the Characteristics of Ba0.6Sr0.4Ti1-xMnxO3-Film Resistance Random Access Memory Devices;Micromachines;2024-09-12

2. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications;ACS Applied Electronic Materials;2023-12-29

3. The photovoltaic conversion enhancement of CuAlO2/LaNiO3 quantum dots/SnO2 transparent pn junction via dual functional perovskite LaNiO3 QDs;Ceramics International;2023-06

4. Improved Resistive Switching of SnO2 Based Resistive Random Access Memory Devices Using Post Microwave Treatment;Journal of Electrical Engineering & Technology;2021-01-20

5. Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices;Advanced Materials;2020-12-14

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