Investigation of defect structure in homoepitaxial (2¯01) β-Ga2O3 layers prepared by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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Investigation of defect structure in homoepitaxial (2¯01) β-Ga2O3 layers prepared by plasma-assisted molecular beam epitaxy

Published:2020-09 Issue: Volume:834 Page:155027
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Ngo Trong Si,Le Duc Duy,Lee Jungkuk,Hong Soon-Ku,Ha Jun-Seok,Lee Woo-Sik,Moon Young-Boo

Funder

Strategic Core Material Development Program

Ministry of Trade, Industry and Energy

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference60 articles.

1. Crystal structure of β-Ga2O3;Geller;J. Chem. Phys.,1960

2. Optical absorption and photoconductivity in the band edge of β-Ga2O3;Tippins;Phys. Rev.,1965

3. First-principles study of the structural, electronic, and optical properties of Ga2O3 in its monoclinic and hexagonal phases;He;Phys. Rev. B,2006

4. Deep-ultraviolet transparent conductivebeta-Ga2O3 thin films;Orita;Appl. Phys. Lett.,2000

5. MBE grown Ga2O3 and its power device applications;Sasaki;J. Cryst. Growth,2013

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial Growth of Ga2O3: A Review;Materials;2024-08-28

2. The anisotropy of deformation behaviors in (100) and (010) plane of monoclinic β-Ga2O3 single crystals;Journal of Alloys and Compounds;2024-03

3. Enhancing the quality of homoepitaxial (−201) β-Ga2O3 thin film by MOCVD with in situ pulsed indium;Applied Physics Letters;2024-02-12

4. Structures, influences, and formation mechanism of planar defects on (100), (001) and (−201) planes in β-Ga₂O₃ crystals;Physical Chemistry Chemical Physics;2024

5. RF magnetron sputtering of Ga2 O3 thin films: Analysis of oxygen flow rate impact on stoichiometry, structural, optical characteristics, and energy band alignments;Materials Science in Semiconductor Processing;2024-01

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