Structures, influences, and formation mechanism of planar defects on (100), (001) and (−201) planes in β-Ga<sub>2</sub>O<sub>3</sub> crystals-Reference-Cited by-同舟云学术

Structures, influences, and formation mechanism of planar defects on (100), (001) and (−201) planes in β-Ga₂O₃ crystals

Published:2024 Issue:16 Volume:26 Page:12564-12572
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Li Qi¹,Guan Xin¹,Zhong Yu¹²^ORCID,Jia Zhitai¹²^ORCID,Li Yang¹,Lin Na¹^ORCID

Affiliation:

1. State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Institute of Crystal Materials, Shandong University, Jinan, Shandong 250100, China

2. Shandong Research Institute of Industrial Technology, Jinan, Shandong 250100, China

Abstract

The structures, influences, and formation mechanism of planar defects in β-Ga2O3 crystals, and the infulence of common point defects on the formation of these planar defects.

Funder

Natural Science Foundation of Shandong Province

National Natural Science Foundation of China

Special Project for Research and Development in Key areas of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CP/D3CP04305C

Reference47 articles.

1. Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy

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3. High signal/noise ratio and high-speed deep UV detector on β-Ga2O3 thin film composed of both (400) and (2¯01) orientation β-Ga2O3 deposited by the PLD method

4. Guest Editorial: The dawn of gallium oxide microelectronics

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