Effect of the Sb content and the n− and p−GaSb(100) substrates on the physical and chemical properties of InSb As1- alloys for mid-infrared applications: Analysis of surface, bulk and interface-Reference-Cited by-同舟云学术

Effect of the Sb content and the n− and p−GaSb(100) substrates on the physical and chemical properties of InSb As1- alloys for mid-infrared applications: Analysis of surface, bulk and interface

Published:2021-04 Issue: Volume:861 Page:157936
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Casallas-Moreno Y.L.,Ramírez-López M.,Villa-Martínez G.,Martínez-López A.L.,Macias M.,Cruz-Orea A.,González de la Cruz G.,Tomás S.A.,Rodríguez-Fragoso P.,Herrera-Pérez J.L.,Mendoza-Álvarez J.G.

Funder

Instituto Politécnico Nacional

Consejo Nacional de Ciencia y Tecnología

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

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4. Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE;Kesaria;J. Phys. D Appl. Phys.,2016

5. InAsSb/InAsPSb multiple quantum well disk cavities with pedestal structures on a GaSb substrate for mid-infrared whispering-gallery-mode emission beyond 4 μm;Lin;Opt. Lett.,2015

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