Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon-Reference-Cited by-同舟云学术

Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon

Published:2019-01-16 Issue:2 Volume:6 Page:538-544
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Delli Evangelia¹,Letka Veronica²,Hodgson Peter D.²,Repiso Eva²,Hayton Jonathan P.¹,Craig Adam P.²,Lu Qi²,Beanland Richard³,Krier Anthony²,Marshall Andrew R. J.²,Carrington Peter J.¹^ORCID

Affiliation:

1. Engineering Department, Lancaster University, Bailrigg, Lancaster, LA1 4YW, United Kingdom

2. Physics Department, Lancaster University, Bailrigg, Lancaster, LA1 4YB, United Kingdom

3. Physics Department, University of Warwick, Coventry, CA4 7AL, United Kingdom

Funder

Engineering and Physical Sciences Research Council

Royal Academy of Engineering

Research Committee, Lancaster University

Joy Welch Educational Charitable Trust

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

http://pubs.acs.org/doi/pdf/10.1021/acsphotonics.8b01550

Reference28 articles.

1. Progress in Infrared Photodetectors Since 2000

2. High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection

3. InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations

4. Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices

5. Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice

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