High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection
Author:
Affiliation:
1. Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference24 articles.
1. InAs-GaSb superlattice energy structure and its semiconductor-semimetal transition
2. M. Razeghi , U.S. patent 7001794 (Feb, 21, 2006).
3. M. Razeghi , keynote presentation at SPIE DSS (2014), p. 123.
4. Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices
5. Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm
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