Influence of TMIn flow rate on structural and optical quality of AlInGaN/GaN epilayers grown by MOCVD-Reference-Cited by-同舟云学术

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Influence of TMIn flow rate on structural and optical quality of AlInGaN/GaN epilayers grown by MOCVD

Published:2016-01 Issue: Volume:656 Page:640-646
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Loganathan R.,Prabakaran K.,Pradeep S.,Surender S.,Singh Shubra,Baskar K.

Funder

Department of Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference20 articles.

1. Radiative recombination mechanism of carriers in InGaN/AlInGaN multiple quantum wells with varying aluminum content;Liu;J. Alloys Comp.,2015

2. Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer;Penga;J. Alloys Comp.,2013

3. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes;Hirayama;J. Appl. Phys.,2005

4. Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop;Schubert;Appl. Phys. Lett.,2008

5. Deep-ultraviolet light-emitting diodes;Shur;IEEE Trans. Electron Devices,2010

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanism of V-Shaped Pits on Promoting Hole Injection in the InGaN MQWs: First-Principles Investigation;ACS Omega;2024-01-29

2. Realization of p-type conduction in compositionally graded quaternary AlInGaN;Micro and Nanostructures;2022-10

3. Effect of TMAl flow rate on AlInGaN/GaN heterostructures grown by MOCVD;Optik;2019-02

4. Effect of gamma irradiation on AlInGaN/AlN/GaN heterostructures grown by MOCVD;Superlattices and Microstructures;2018-08

5. Suppressed polarization effect and enhanced carrier confinement in InGaN light-emitting diodes with GaN/InGaN/GaN triangular barriers;Journal of Applied Physics;2018-06-14

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