Suppressed polarization effect and enhanced carrier confinement in InGaN light-emitting diodes with GaN/InGaN/GaN triangular barriers-Reference-Cited by-同舟云学术

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Suppressed polarization effect and enhanced carrier confinement in InGaN light-emitting diodes with GaN/InGaN/GaN triangular barriers

Published:2018-06-14 Issue:22 Volume:123 Page:223104
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Cheng Liwen¹²,Cao Changrui¹,Ma Jian¹,Xu Zuozheng¹,Lan Tian³,Yang Jinpeng¹,Chen Haitao¹,Yu Hongyan³,Wu Shudong¹,Yao Shun³⁴,Zeng Xianghua¹^ORCID

Affiliation:

1. College of Physical Science and Technology, Yangzhou University, Yangzhou 225002, China

2. Jiangsu Kinzo Opto-electronic Instrument Co., Ltd., Yangzhou 225100, China

3. Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China

4. Sino-Semiconductors Technologies Co., Ltd., Taizhou 225300, China

Funder

National Key R&D Program of China

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5027643

Reference21 articles.

1. Solid-State Light Sources Getting Smart

2. Natural white light

3. Prospects for LED lighting

4. Efficiency droop in nitride-based light-emitting diodes

5. Electron leakage effects on GaN-based light-emitting diodes

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1. Optical Properties of Low‐dimensional Structures in GroupIIINitrides;Group III‐Nitride Semiconductor Optoelectronics;2023-10-18

2. Improved Output Power of GaN-based VCSEL with Band-Engineered Electron Blocking Layer;Micromachines;2019-10-12

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