Forming-free electrochemical metallization resistive memory devices based on nanoporous TiO x N y thin film-Reference-Cited by-同舟云学术

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Forming-free electrochemical metallization resistive memory devices based on nanoporous TiO x N y thin film

Published:2016-01 Issue: Volume:656 Page:612-617
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Zhao Xiaoning,Li Mengyao,Xu Haiyang,Wang Zhongqiang,Zhang Cen,Liu Weizhen,Ma Jiangang,Liu Yichun

Funder

NSFC

Jilin Province

Central Universities

Postdoctoral Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference38 articles.

1. Redox-based resistive switching memories–nanoionic mechanisms, prospects, and challenges;Waser;Adv. Mater.,2009

2. Nanoionics-based resistive switching memories;Waser;Nat. Mater.,2007

3. Forming-free-based resistive switching devices on CMOS-compatible W-plugs;Hermes;IEEE Electron Device Lett.,2011

4. Forming-free resistive switching behaviors in Cr-embedded Ga2O3 thin film memories;Lee;J. Appl. Phys.,2011

5. Performance improvement of CuOx with gradual oxygen concentration for nonvolatile memory application;Zhou;J. Vac. Sci. Technol. B,2008

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2. Bipolar Resistive Switching in 2D MoSe₂ Grown by Atmospheric Pressure Chemical Vapor Deposition;ACS Applied Materials & Interfaces;2023-12-19

3. Air-based sputtering deposition of titanium oxynitride-based single, gradient, and multi-layer thin films for photoelectrochemical applications;Ceramics International;2023-05

4. Complementary bipolar resistive switching behavior in lithium titanate memory device;Applied Physics Express;2023-05-01

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