Complementary bipolar resistive switching behavior in lithium titanate memory device

Abstract

Abstract In this paper, we report the coexistence of usual bipolar and unique complementary bipolar resistive switching behaviors in an Ag/Li x Ti5O12/Pt memory device. The SET and RESET polarities of the complementary bipolar resistive switching mode were found to be opposite to those of the usual bipolar resistive switching mode. The two bipolar switching modes can be freely converted without altering the compliance current. Based on the conducting filament model, the normal bipolar resistive switching mode is explained by an Ag filament and electrochemical metallization mechanism. Whereas, the complementary bipolar resistive switching behavior is ascribed to Li diffusion and phase transition between Li x Ti5O12 and conducting lithium-rich Li x Ti5O12.