Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatments-Reference-Cited by-同舟云学术

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Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatments

Published:2018-10 Issue: Volume:767 Page:600-605
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Ren Bing,Sumiya Masatomo,Liao Meiyong^ORCID,Koide Yasuo,Liu Xinke,Shen Yue,Sang Liwen

Funder

World Premier International Research Center

Materials Nanoarchitectonics

MEXT

National Key Research and Development Program of China

National Natural Science Foundation of China

Public Welfare Capacity Building in Guangdong Province

Science and Technology Foundation of Shenzhen

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference23 articles.

1. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization induced two-dimensional hole gas;Zhang;Sci. Rep.,2016

2. GaN high electron mobility transistors with AlInN back barriers;He;J. Alloys Compd.,2016

3. Determination of band offsets between p-NiO gate electrode and unintentionally doped GaN for normally-off GaN power devices;Li;J. Alloys Compd.,2017

4. Nearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistance;Ren;Appl. Phys. Express,2017

5. Study of optical properties of bulk GaN crystals grown by HVPE;Gu;J. Alloys Compd.,2016

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2. Electrospun-Aligned Gd-Doped In₂O₃ Nanofiber Field-Effect Transistors for Artificial DNA Detection;ACS Applied Nano Materials;2023-05-03

3. Study and characterization of GaN MOS capacitors: Planar vs trench topographies;Applied Physics Letters;2022-04-04

4. Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03

5. 1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer;Nanoscale Research Letters;2022-01-15

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