Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs
Author:
Affiliation:
1. University of Padova,Department of Information Engineering,Padova,Italy,35131
2. Imec,Leuven,Belgium,3001
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764600.pdf?arnumber=9764600
Reference10 articles.
1. Gallium nitride vertical power devices on foreign substrates: a review and outlook
2. Recent development of vertical GaN power devices
3. Ferroelectric Thin-Film Capacitors and Piezoelectric Switches for Mobile Communication Applications
4. Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability
5. Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization
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1. GaN Vertical MOSFETs With Monolithically Integrated Freewheeling Merged pn-Schottky Diodes (MPS-MOS) for 1.2-kV Applications;IEEE Transactions on Electron Devices;2024-08
2. Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
3. Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors;Microelectronics Reliability;2022-11
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