Growth AlxGa1−xN films on Si substrates by magnetron sputtering and high ammoniated two-step method-Reference-Cited by-同舟云学术

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Growth AlxGa1−xN films on Si substrates by magnetron sputtering and high ammoniated two-step method

Published:2016-05 Issue: Volume:667 Page:346-351
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Wang Xuewen,Su Xingxing,Hu Feng,He Lin,He Lewan,Zhang Zhiyong,Zhao Wu,Wang Kai-Ge,Wang Shuang

Funder

National Natural Science Foundation of China

Natural Science Foundation of Education Commission of Shaanxi Province

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference29 articles.

1. AlGaN/GaN Based SAW-HEMT Devices for Chemical Gas Sensors Operating in GHz Range;Rýger;Procedia Eng.,2011

2. Group III-nitride-based gas sensors for combustion monitoring;Schalwig;Mater. Sci. Eng. B,2002

3. Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si;Polyakov;J. Alloys Compd.,2013

4. Optical analysis of biaxial stress distribution in Al0.26Ga0.74N/GaN/Si HEMT's;Jabli;J. Alloys Compd.,2015

5. Low gate interface traps AlGaN/GaN HEMTs using a lattice matched ZrZnO transparent gate design;Chiu;Microelectron. Reliab.,2013

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1. Chitosan Coating Biotechnology for Sustainable Environment;Biotechnology for Sustainable Environment;2021

2. Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors;Materials;2020-11-04

3. Parametric study on the well-oriented growth of InxAl1-xN nanodots by magnetron sputtering;Materials Science in Semiconductor Processing;2019-11

4. Point-Defect Distribution and Transformation Near the Surfaces of AlGaN Films Grown by MOCVD;The Journal of Physical Chemistry C;2019-03-22

5. Growth and characterization of InxAl1−xN films on silicon substrate by magnetron sputtering method;Materials Research Express;2018-11-20

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