Point-Defect Distribution and Transformation Near the Surfaces of AlGaN Films Grown by MOCVD-Reference-Cited by-同舟云学术

Point-Defect Distribution and Transformation Near the Surfaces of AlGaN Films Grown by MOCVD

Published:2019-03-22 Issue:14 Volume:123 Page:8865-8870
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Liu Ningyang¹^ORCID,Wang Qiao¹,Li Bo²,Wang Junjun¹,Zhang Kang¹,He Chenguang¹^ORCID,Wang Lei²,Song Ligang³,Cao Xingzhong³^ORCID,Wang Baoyi³,Lin Dan¹,Liu Xiaoyan¹,Zhao Wei¹,Gong Zheng¹,Chen Zhitao¹

Affiliation:

1. Guangdong Institute of Semiconductor Industrial Technology, Guangdong Academy of Sciences, Guangzhou 510650, People’s Republic of China

2. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China

3. Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People’s Republic of China

Funder

Natural Science Foundation of Guangdong Province

Ministry of Science and Technology of the People's Republic of China

Guangzhou City

Guangzhou Science, Technology and Innovation Commission

Guangdong Province

Guangdong Academy of Sciences

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.8b11807

Reference33 articles.

1. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes

2. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

3. Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells

4. Growth AlxGa1−xN films on Si substrates by magnetron sputtering and high ammoniated two-step method

5. Mid-infrared ellipsometry, Raman and X-ray diffraction studies of Al Ga1−N/AlN/Si structures

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