AlGaN/GaN Based SAW-HEMT Devices for Chemical Gas Sensors Operating in GHz Range-Reference-Cited by-同舟云学术

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AlGaN/GaN Based SAW-HEMT Devices for Chemical Gas Sensors Operating in GHz Range

Published:2011 Issue: Volume:25 Page:1101-1104
ISSN:1877-7058
Container-title:Procedia Engineering
language:en
Short-container-title:Procedia Engineering

Author:

Rýger Ivan,Vanko Gabriel,Lalinský Tibor,Vallo Martin,Tomáška Martin,Ritomský Adrian

Publisher

Elsevier BV

Subject

Applied Mathematics

Reference8 articles.

1. AlGaN/GaN based SAW-HEMT structures for chemical gas sensors

2. Guided propagation of surface acoustic waves in AlN and GaN films grown on4H–SiC(0001)substrates

3. Hess, P., Physics Today, March 2002, pp. 42-47.

4. Komatsu, Y., Yaganisawa, Y.,IEEE TRANSACTIONS ON ELECTRON DEVICES, MARCH 1977.

5. Wang, W., et. al., Sensors and A ctuators B 125 (2007) 422-427.

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1. AlGaN films grown by reactive magnetron sputtering on glass substrates with different Al content;Surfaces and Interfaces;2023-08

2. Sensor applications based on AlGaN/GaN heterostructures;Materials Science and Engineering: B;2021-01

3. Growth AlxGa1−xN films on Si substrates by magnetron sputtering and high ammoniated two-step method;Journal of Alloys and Compounds;2016-05

4. Modelling and Simulation of SAW Sensor Using FEM;Procedia Engineering;2012

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