AlGaN/GaN based SAW-HEMT structures for chemical gas sensors-Reference-Cited by-同舟云学术

AlGaN/GaN based SAW-HEMT structures for chemical gas sensors

Published:2010 Issue: Volume:5 Page:152-155
ISSN:1877-7058
Container-title:Procedia Engineering
language:en
Short-container-title:Procedia Engineering

Author:

Lalinský T.,Rýger I.,Vanko G.,Tomáška M.,Kostič I.,Haščík S.,Vallo M.

Publisher

Elsevier BV

Subject

Applied Mathematics

Reference5 articles.

1. Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications;Cimalla;J J Phys D: Appl. Phys,2007

2. Active SAW devices on 2DEG heterostructures;Calle;Electronics Letters,2004

3. SAW filters composed of interdigital Schottky and ohmic contacts on AlGaN/GaN heterostructures;Shigekawa;IEEE Electron Device,2007

4. Vincze A and Uherek F. AlGaN/GaN heterostructure based surface acoustic wave structures for chemical sensors;Lalinský;Applied Surface Sci,2008

5. T. Lalinský, G. Vanko, J. Jakovenko, V. Kutič, M. Ivanova, Š Haščík, J. Murín, M. Husák, I. Kostič, AlGaN/GaN HEMT based micro-hotplate for high temperature gas sensors. In: MNE09. The 35th Inter. Conf. on Micro & Nano Engineering; Ghent 2009.

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