AlGaN/GaN heterostructure-based surface acoustic wave-structures for chemical sensors-Reference-Cited by-同舟云学术

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AlGaN/GaN heterostructure-based surface acoustic wave-structures for chemical sensors

Published:2008-11 Issue:3 Volume:255 Page:712-714
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Lalinský T.,Rufer L.,Vanko G.,Mir S.,Haščík Š.,Mozolová Ž.,Vincze A.,Uherek F.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference5 articles.

1. Active SAW devices on 2DEG heterostructures

2. SAW Filters Composed of Interdigital Schottky and Ohmic Contacts on AlGaN/GaN Heterostructures

3. Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

4. Normally Off AlGaN/GaN Low-Density Drain HEMT (LDD-HEMT) With Enhanced Breakdown Voltage and Reduced Current Collapse

5. Compact Model of Current Collapse in Heterostructure Field-Effect Transistors

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1. AlGaN films grown by reactive magnetron sputtering on glass substrates with different Al content;Surfaces and Interfaces;2023-08

2. Ammonia Sensing Characteristics of a Platinum (Pt) Hybrid Structure/GaN-Based Schottky Diode;IEEE Transactions on Electron Devices;2020-01

3. Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment;Applied Surface Science;2017-02

4. Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser deposition;Applied Surface Science;2016-04

5. Quantitative study for surface properties of AlGaN epi-layers by ARXPS;The European Physical Journal Applied Physics;2015-10-30

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