Quantitative study for surface properties of AlGaN epi-layers by ARXPS
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://epjap.epj.org/10.1051/epjap/2015150418/pdf
Reference18 articles.
1. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
2. An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications
3. High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well
4. AlGaN/GaN heterostructure-based surface acoustic wave-structures for chemical sensors
5. Real‐time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Thickness-dependent physical and nanomechanical properties of AlxGa1−xN thin films;Materials Science in Semiconductor Processing;2022-11
2. Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition;Applied Physics Letters;2017-06-12
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