Compatible resistive switching mechanisms in Ni/SiOx/ITO and application to neuromorphic systems-Reference-Cited by-同舟云学术

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Compatible resistive switching mechanisms in Ni/SiOx/ITO and application to neuromorphic systems

Published:2022-05 Issue: Volume:903 Page:163870
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Park Minsu,Park Jongmin,Kim Sungjun

Funder

Ministry of Science, ICT and Future Planning

National Research Foundation of Korea

NRF

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference48 articles.

1. Manipulated transformation of filamentary and homogeneous resistive switching on ZnO thin film memristor with controllable multistate;Huang;ACS Appl. Mater. Interfaces,2013

2. Nanoscale resistive switching devices for memory and computing applications;Lee;Nano Res.,2020

3. Memristive crossbar arrays for storage and computing applications;Li;Adv. Intell. Syst.,2021

4. Towards engineering in memristors for emerging memory and neuromorphic computing: a review;Sokolov;J. Semicond.,2021

5. Neurohybrid memristive CMOS-integrated systems for biosensors and neuroprosthetics;Mikhaylov;Front. Neurosci.,2020

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4. Formation-free resistive switching in nanocrystalline tellurium oxide;Nanotechnology;2024-04-09

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