Controlled charge transport in ZrO2 and its bilayer structures for low-power memory-Reference-Cited by-同舟云学术

Controlled charge transport in ZrO2 and its bilayer structures for low-power memory

Published:2024-10 Issue: Volume:1001 Page:175103
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Aziz Jamal,Khan Muhammad Farooq,Neumaier Daniel,Miao Zhuang,Elahi Ehsan,Kim Honggyun,Chavan Vijay D.,Ghafoor Faisal,Ghfar Ayman A.,Kadam Kalyani D.,Patil Harshada

Publisher

Elsevier BV

Reference76 articles.

1. Reversible transition of volatile to non-volatile resistive switching and compliance current-dependent multistate switching in IGZO/MnO RRAM devices;Abbas;Appl. Phys. Lett.,2019

2. Reliability of analog resistive switching memory for neuromorphic computing;Zhao;Appl. Phys. Rev.,2020

3. Nanoscale memristor device as synapse in neuromorphic systems;Jo;Nano Lett.,2010

4. Controllable analog resistive switching and synaptic characteristics in ZrO2/ZTO bilayer memristive device for neuromorphic systems;Ismail;Appl. Surf. Sci.,2020

5. Resistive Switching: From Fundamentals Of Nanoionic Redox Processes To Memristive Device Applications;Ielmini,2015

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Blood-based biomemristor for hyperglycemia and hyperlipidemia monitoring;Materials Today Bio;2024-10

2. Audio Signal-Stimulated Multilayered HfOx/TiOy Spiking Neuron Network for Neuromorphic Computing;Nanomaterials;2024-08-29

3. A zinc oxide-based threshold switching memristor for simulating synaptic plasticity and artificial nociceptor;Journal of Materials Science: Materials in Electronics;2024-08

4. Biomimetic Neuromorphic Sensory System via Electrolyte Gated Transistors;Sensors;2024-07-29