Role of IGZO thickness for oxygen reservoir control in stacked IGZO/ZrOx layers: Towards reliable, uniform performance of flexible random-access memories

Author:

Kumar Ajit,Krishnaiah Mokurala,Mishra Dhananjay,Jo Hyeonbin,Jin Sung Hun

Funder

Incheon National University

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference62 articles.

1. Metal-oxide RRAM;Wong;Proc. IEEE,2012

2. In memory energy application for resistive random access memory;Trotti;Adv. Electron. Mater.,2021

3. Resistive switching in transition metal oxides;Sawa;Mater. Today,2008

4. Resistive random access memory: a review of device challenges;Gupta;IETE Tech. Rev. (Inst. Electron. Telecommun. Eng. India),2020

5. Unipolar resistive switching behaviors and mechanisms in an annealed Ni/ZrO2/TaN memory device;Tsai;J. Phys. D. Appl. Phys.,2015

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