In Memory Energy Application for Resistive Random Access Memory-Reference-Cited by-同舟云学术

In Memory Energy Application for Resistive Random Access Memory

Published:2021-08-19 Issue:12 Volume:7 Page:2100297
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Trotti Paola¹^ORCID,Oukassi Sami¹,Molas Gabriel¹,Bernard Mathieu¹,Aussenac François¹,Pillonnet Gaël¹

Affiliation:

1. CEA LETI Univ. Grenoble Alpes Grenoble 38000 France

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100297

Reference49 articles.

1. A.Wolfgang M.Brillouët P.Cogez M.Graef B.Huizing R.Mahnkopf “More‐than‐Moore” White Paper. International Technology Roadmap for Semiconductors www.itrs.net/ITRS201999-2014Mtgs Presentations&Links/2010ITRS/IRC-ITRS-MtM-v23.pdf.2010 p.2 (Accessed: August 2021).

2. Three-dimensional silicon-integrated capacitor with unprecedented areal capacitance for on-chip energy storage

3. Assessing the potential of LiPON-based electrical double layer microsupercapacitors for on-chip power storage

4. Memory devices and applications for in-memory computing

5. Resistive switching memory integrated with amorphous carbon-based nanogenerators for self-powered device

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploring the Bifunctionality of YSZ Thin Films in MOS Structures: Bridging the Gap between RRAM and Super-Pseudocapacitor Technologies;ACS Applied Electronic Materials;2024-01-03

2. An Artificial Olfactory System Based on a Memristor Can Simulate Organ Injury and Functions in Air Purification;ACS Sensors;2023-12-07

3. Investigating the Effects of Sulfur Treatment on Material Characteristics and Resistance Switching Device Applications with Supercritical Fluid Technique;physica status solidi (a);2023-09-07

4. Mg dopant induced ultra-high HRS resistance and striking switching window characteristics in amorphous Y2O3 film-based memristors;Applied Physics Letters;2023-08-21

5. Ultra-low power consumption and favorable reliability Mn-doped BiFeO3 resistance-switching devices via tunable oxygen vacancy;Ceramics International;2023-03