Influence of oxygen-related defects on In-Ga-Sn-O semiconductor due to plasma-enhanced atomic layer deposition of Al2O3 for low-temperature thin-film transistor in terms of electrical properties-Reference-Cited by-同舟云学术

Influence of oxygen-related defects on In-Ga-Sn-O semiconductor due to plasma-enhanced atomic layer deposition of Al2O3 for low-temperature thin-film transistor in terms of electrical properties

Published:2022-10 Issue: Volume:918 Page:165649
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Kim Hyeong Wook,Oh Changyong,Jang Hyunjae,Kim Min Young,Kim Bo Sung

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

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