Analysis of Mechanical and Electrical Origins of Degradations in Device Durability of Flexible InGaZnO Thin-Film Transistors
Author:
Affiliation:
1. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi 17104, South Korea
2. Electronics and Telecommunications Research Institute, Daejeon 34129, Republic of Korea
Funder
Samsung
Korea Institute of Energy Technology Evaluation and Planning
Kyung Hee University
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00339
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1. Woven Electronic Fibers with Sensing and Display Functions for Smart Textiles
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