Thermal stability of hafnium and hafnium nitride gates on HfO2 gate dielectrics
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference33 articles.
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5. Zirconium-Doped Tantalum Oxide Gate Dielectric Films Integrated with Molybdenum, Molybdenum Nitride, and Tungsten Nitride Gate Electrodes
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1. Magnetron Sputtered Thin Films Based on Transition Metal Nitride: Structure and Properties;physica status solidi (a);2022-12-16
2. Combination of ultraviolet exposure and thermal post-treatment to obtain high quality HfO2 thin films;Ceramics International;2021-04
3. Effect of post annealed treatment on HfN thin films prepared by DC reactive magnetron sputtering;THE SECOND MATERIALS RESEARCH SOCIETY OF THAILAND INTERNATIONAL CONFERENCE;2020
4. Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition;Journal of Materials Science;2018-02-14
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