Tunable work functions of platinum gate electrode on HfO2 thin films for metal-oxide-semiconductor devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2892045
Reference16 articles.
1. Ti gate compatible with atomic-layer-deposited HfO2 for n-type metal-oxide-semiconductor devices
2. Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology
3. Electronic structure of a metal-semiconductor interface
4. Effects of high-/spl kappa/ gate dielectric materials on metal and silicon gate workfunctions
5. Band offsets and Schottky barrier heights of high dielectric constant oxides
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