Ti gate compatible with atomic-layer-deposited HfO2 for n-type metal-oxide-semiconductor devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1871362
Reference18 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2
3. Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I
4. Band offsets of wide-band-gap oxides and implications for future electronic devices
5. Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology
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