Combination of ultraviolet exposure and thermal post-treatment to obtain high quality HfO2 thin films

Author:

Kim Jaemin,Park Jinsu,Pham Duy Phong,Yeo Myung Soo,Rhee HwaSung,Kim Youg-Sang,Cho Eun-ChelORCID,Yi Junsin

Funder

Samsung

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference37 articles.

1. Film properties of ALD HfO[sub 2] and La[sub 2]O[sub 3] gate dielectrics grown on Si with various pre-deposition treatments;Triyoso;J. Vac. Sci. Technol. B Microelectron. Nanom. Struct.,2004

2. Thin high-k dielectric layers deposited by ALD;Campabadal,2009

3. First-principles calculations of electronic and optical properties of Ti-doped monoclinic HfO2;Tan;J. Alloys Compd.,2011

4. Thermal stability of hafnium and hafnium nitride gates on HfO2 gate dielectrics;Tsai;J. Alloys Compd.,2009

5. Comparison between Al2O3 thin films grown by ALD using H2O or O3 as oxidant source;Campabadal,2011

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