Film properties of ALD HfO[sub 2] and La[sub 2]O[sub 3] gate dielectrics grown on Si with various pre-deposition treatments-Reference-Cited by-同舟云学术

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Film properties of ALD HfO[sub 2] and La[sub 2]O[sub 3] gate dielectrics grown on Si with various pre-deposition treatments

Published:2004 Issue:4 Volume:22 Page:2121
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Triyoso D. H.,Hegde R. I.,Grant J.,Fejes P.,Liu R.,Roan D.,Ramon M.,Werho D.,Rai R.,La L. B.,Baker J.,Garza C.,Guenther T.,White B. E.,Tobin P. J.

Publisher

American Vacuum Society

Subject

General Engineering

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