Growth of InGaN layers on (111) silicon substrates by reactive sputtering-Reference-Cited by-同舟云学术

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Growth of InGaN layers on (111) silicon substrates by reactive sputtering

Published:2014-02 Issue: Volume:587 Page:217-221
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Guo Qixin,Nakao Tomoya,Ushijima Takaya,Shi Wangzhou,Liu Feng,Saito Katsuhiko,Tanaka Tooru,Nishio Mitsuhiro

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference20 articles.

1. Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells

2. Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation

3. Simulation of In0.65Ga0.35N single-junction solar cell

4. Design and characterization of GaN∕InGaN solar cells

5. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of the surface chemistry, surface morphology, optical, and structural properties of InGaN thin films deposited by RF magnetron sputtering;Applied Surface Science;2022-06

2. Effects of indium flow rate on the structural, morphological, optical and electrical properties of InGaN layers grown by metal organic chemical vapour deposition;Journal of Alloys and Compounds;2019-11

3. Structural and optical characterization of GaAs and InGaAs thin films deposited by RF magnetron sputtering;Optik;2017-09

4. InxGa1-xAs obtained from independent target via co-sputtering deposition;Journal of Physics: Conference Series;2017-06

5. Effects of Nitrogen Flow Ratio on the Properties of Radiofrequency-Sputtered InGaN Films;Journal of Electronic Materials;2015-02-12

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