Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4822122
Reference24 articles.
1. Crystal growth of column III nitrides and their applications to short wavelength light emitters
2. Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium composition
3. Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN
4. Generation of misfit dislocations by basal-plane slip in InGaN∕GaN heterostructures
5. Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates
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