Ferroelectric enhancement of Al-doped HfO2 thin films by rapid electron beam annealing in a low thermal budget-Reference-Cited by-同舟云学术

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Ferroelectric enhancement of Al-doped HfO2 thin films by rapid electron beam annealing in a low thermal budget

Published:2022-08 Issue:10 Volume:42 Page:4221-4226
ISSN:0955-2219
Container-title:Journal of the European Ceramic Society
language:en
Short-container-title:Journal of the European Ceramic Society

Author:

Wang Ting-Yun,Kao Wei-Chung,Yin Yu-Tung,Shieh Jay,Chen Miin-Jang

Funder

Taiwan Semiconductor Manufacturing Company

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

Materials Chemistry,Ceramics and Composites

Reference33 articles.

1. C. Mart, S. Abdulazhanov, M. Czernohorsky, T. Kämpfe, D. Lehninger, K. Falidas, S. Eßlinger, K. Kühnel, S. Oehler, M. Rudolph, M. Wiatr, S. Kolodinski, R. Seidel, W. Weinreich, L.M. Eng, Energy harvesting in the back-end of line with CMOS compatible ferroelectric hafnium oxide, in: Proeedings of the 2020 IEEE International Electron Devices Meeting (IEDM), IEEE, 2020, pp. 26.3.1–26.3.4.

2. J. Müller, T.S. Böscke, S. Müller, E. Yurchuk, P. Polakowski, J. Paul, D. Martin, T. Schenk, K. Khullar, A. Kersch, W. Weinreich, S. Riedel, K. Seidel, A. Kumar, T.M. Arruda, S.V. Kalinin, T. Schlösser, R. Boschke, R. van Bentum, U. Schröder, T. Mikolajick, Ferroelectric hafnium oxide: a CMOS-compatible and highly scalable approach to future ferroelectric memories, in: Proeedings of the 2013 IEEE International Electron Devices Meeting (IEDM), IEEE, 2013, pp. 10.8.1–10.8.4.

3. Current status and challenges of ferroelectric memory devices;Kohlstedt;Microelectron. Eng.,2005

4. Ferroelectric materials for neuromorphic computing;Oh;APL Mater.,2019

5. Ferroelectric analog synaptic transistors;Kim;Nano Lett.,2019

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1. Optimization of ferroelectricity and endurance of hafnium zirconium oxide thin films by controlling element inhomogeneity;Journal of Advanced Ceramics;2024-07

2. Neuromorphic Vision Sensor driven by Ferroelectric HfAlO;Materials Today Nano;2024-06

3. Effect of Al Concentration on Ferroelectric Properties in HfAlO_x‐Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications;Advanced Intelligent Systems;2023-05-18

4. The Doping Effect on the Intrinsic Ferroelectricity in Hafnium Oxide-Based Nano-Ferroelectric Devices;Nano Letters;2023-03-13

5. Modulating the microscopic lattice distortions through the Al-rich layers for boosting the ferroelectricity in Al:HfO₂ nanofilms;Journal of Physics D: Applied Physics;2022-09-15

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