Indiscriminate revelation of dislocations in single crystal SiC by inductively coupled plasma etching-Reference-Cited by-同舟云学术

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Indiscriminate revelation of dislocations in single crystal SiC by inductively coupled plasma etching

Published:2019-08 Issue:9 Volume:39 Page:2831-2838
ISSN:0955-2219
Container-title:Journal of the European Ceramic Society
language:en
Short-container-title:Journal of the European Ceramic Society

Author:

Zhang Yi,Li Rulin,Zhang Yongjie,Liu Dianzi,Deng Hui^ORCID

Funder

Southern University of Science and Technology

International Cooperation from the Science and Technology Innovation Committee of Shenzhen Municipality

Pico Center at SUSTech that receives support from Presidential fund and Development and Reform Commission of Shenzhen Municipality

Publisher

Elsevier BV

Subject

Materials Chemistry,Ceramics and Composites

Reference40 articles.

1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices;Bhatnagar;IEEE Trans. Electron Devices,1993

2. Ultrahigh-quality silicon carbide single crystals;Nakamura;Nature,2004

3. Capillary equilibria of dislocated crystals;Frank;Acta Crystallogr.,1951

4. Silicon carbide as a platform for power electronics;Eddy;Science,2009

5. Electrical characterization of 4H–SiC avalanche photodiodes containing threading edge and screw dislocations;Berechman;J. Appl. Phys.,2010

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