A high accuracy resonant pressure sensor by fusion bonding and trench etching

Author:

Welham Christopher J,Greenwood John,Bertioli Michael M

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Silicon fusion bonding and deep reactive ion etching: a new technology for microstructures;Klassen;Sensors and Actuators A,1996

2. B.P. van Drieënhuizen, M.I. Maluf, I.E. Opris, G.T.A. Kovacs, Force-balanced accelerometer with mG resolution, fabricated using silicon fusion bonding and deep reactive ion etching, Digest of Technical Papers, International Conference on solid state sensors and actuators, Transducers '97, Vol. 2 Chicago IL (1997), pp. 4B2. 12PL.

3. P.-A. Clerc, L. Dellmann, F. Grétillat, M.-A. Grétillat, P.-F. Indermühle, S. Jeanneret, Ph. Luginbuhl, C. Marxer, T.L. Pfeffer, G.-A. Racine, S. Roth, U. Staufer, C. Stebler, P. Thiebaud, N.F. de Rooij, Advanced deep reactive ion etching a versatile tool for microelectromechanical systems, Proc. MME, Ulvik, Norway, 1998, p. A23.

4. C.J. Welham, A silicon micromachined lateral resonant pressure sensor, PhD Thesis, University of Warwick, Coventry, UK, April 1996.

5. High accuracy pressure measurement with a silicon resonant sensor;Greenwood;Sensors and Actuators A,1993

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