Surface roughness of single-crystal silicon etched by TMAH solution-Reference-Cited by-同舟云学术

Surface roughness of single-crystal silicon etched by TMAH solution

Published:2001-05 Issue:3 Volume:90 Page:223-231
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Shikida Mitsuhiro,Masuda Takehiro,Uchikawa Daisuke,Sato Kazuo

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Anisotropic etching of crystalline silicon in alkaline solutions;Seidel;J. Electrochem. Soc.,1990

2. H. Seidel, The mechanism of anisotropic silicon etching and its relevance for micromachining, Technical Digest of Transducers’87, Tokyo, Japan, June 1987, pp. 120–125.

3. Hydration model for the molarity dependence of the etch rate of Si in aqueous alkali hydroxides;Glembocki;J. Electrochem. Soc.,1991

4. Etching roughness for (1 0 0) silicon surface in aqueous KOH;Palik;J. Appl. Phys.,1991

5. L.D. Clark, Jr., D.J. Edell, KOH:H2O etching of (110) Si, (111) Si, SiO2, and Ta: an experimental study, in: Proceedings of the IEEE Micro-Robots and Teleoperators Workshop, Hyannis, Massachusetts, November 1987.

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