Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Reference34 articles.
1. Mertens H, Ritzenthaler R, Hikavyy A, Kim MS, Tao Z, Wostyn K et al (2016) Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates. 2016 IEEE Symposium VLSI Technol.
2. Radamson H, Zhang Y, He X, Cui H, Li J, Xiang J et al (2017) The challenges of advanced CMOS process from 2D to 3D. Appl Sci 7(10):1047
3. Bangsaruntip S, Balakrishnan K, Cheng S-L, Chang J, Brink M, Lauer I, et al. Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond. 2013 IEEE International Electron Devices Meeting. 2013;
4. Nagy D, Indalecio G, Garcia-Loureiro AJ, Elmessary MA, Kalna K, Seoane N (2018) FinFET versus gate-all-around nanowire FET: performance, scaling, and variability. IEEE J Electron Devices Soc. 6:332–340
5. Singh N, Buddharaju KD, Manhas SK, Agarwal A, Rustagi SC, Lo GQ et al (2008) Si, SiGe nanowire devices by top–down technology and their applications. IEEE Trans Electron Devices 55(11):3107–3118
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献