Abstract
Abstract
An integration method of silicon nanowires (SiNWs) bridges in microtrenches was demonstrated combining a local arrangement of catalyst Au nanoparticles by two-step UV lithography, and a vapor–liquid–solid (VLS) bottom-up growth with perpendicularity promotion by surface nanoholes with metal-assisted chemical etching. Au nanoparticles with a diameter of 60 nm were arranged on one-side walls of 10 µm wide microtrenches, with two types of area sizes to evaluate the influence on the yield of SiNWs bridges reaching opposite sidewalls. A four-hour VLS process at 500 °C produced perpendicular SiNWs bridges in the microtrenches, and a higher yield was obtained with a narrow-area arrangement: a 30.7% ratio of densities of SiNWs bridges to Au nanoparticles, and a 2.1/µm2 density in the arrangement area. Fewer SiNWs showed initial oblique growth there, and most of the bridges had a linear morphology. The yield of SiNWs bridges was discussed focusing on depth positions in microtrenches and the depths of surface nanoholes.
Funder
Japan Society for the Promotion of Science
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. モノリシック集積コアシェルSiナノワイヤ架橋構造の熱起電力評価;IEEJ Transactions on Sensors and Micromachines;2023-07-01
2. Evaluation of Thermoelectric Properties of Monolithically-Integrated Core-Shell Si Nanowire Bridges;2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS);2023-01-15