Analysing the dissolution characteristics of deep uv chemically amplified photoresist-Reference-Cited by-同舟云学术

Analysing the dissolution characteristics of deep uv chemically amplified photoresist

Published:1998-03 Issue: Volume:41-42 Page:311-314
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Arthur G.,Mack C.A.,Eilbeck N.,Martin B.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Enhancing the Development Rate Model For Optimum Simulation Capability in the Sub-Half-Micron Regime;Arthur,1997

2. PROLITH/2, FINLE Technologies, Inc., P.O. Box 162712, Austin, Texas 78716, USA.

3. Three-Dimensional Electron Beam Lithography Simulation;Mack,1997

4. Arthur, G., Mack, C.A., Martin, B., “A New Development Model for Lithography Simulation,” Olin Microlithography Seminar, Interface '97, San Diego, CA, USA, to be published.

5. Modeling and Simulation of a Chemically Amplified Resist using the Effective Acid Concept;Weiss;Microelectronic Engineering,1995

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive Simulations for Ultraviolet Lithography Process of Thick SU-8 Photoresist;Micromachines;2018-07-05

2. Modeling and Simulation of SU-8 Thick Photoresist Lithography;Micro/Nano Technologies;2018

3. Dissolution Rate Monitor Tool to Measure EUV Photoresist Dissolution;Journal of Photopolymer Science and Technology;2017

4. Modeling and Simulation of SU-8 Thick Photoresist Lithography;Toxinology;2017

5. Improvement of Electron Beam Lithography modeling for overdose exposures by using Dill transformation;SPIE Proceedings;2016-09-26