An anisotropic U-shaped SF6-based plasma silicon trench etching investigation-Reference-Cited by-同舟云学术

An anisotropic U-shaped SF6-based plasma silicon trench etching investigation

Published:1998-07 Issue:2 Volume:40 Page:85-97
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Burtsev A,Li Y.X,Zeijl H.W,Beenakker C.I.M

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference24 articles.

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2. Statistical experimental design in plasma etch modeling;May;IEEE Trans. Semicond. Manuf.,1991

3. Chromine or bromine chemistry in RIE Si-trench etching;Rangelow;Proc. SPIE,1990

4. Low temperature etching of silicon trenches with SF6 in an electron cyclotron resonance reactor;Watts;J. Vac. Sci. Technol.,1992

5. Plasma etching of silicon in SF6;Lii;J. Electrochem. Soc.,1990

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