Low temperature etching of silicon trenches with SF6 in an electron cyclotron resonance reactor-Reference-Cited by-同舟云学术

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Low temperature etching of silicon trenches with SF6 in an electron cyclotron resonance reactor

Published:1992-07 Issue:4 Volume:10 Page:1313-1317
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Watts A. J.,Varhue W. J.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.578245

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fluorine-based plasmas: Main features and application in micro-and nanotechnology and in surface treatment;Comptes Rendus Chimie;2018-08

2. An anisotropic U-shaped SF6-based plasma silicon trench etching investigation;Microelectronic Engineering;1998-07

3. Plasma Etching;Handbook of Vacuum Science and Technology;1998

4. Anisotropic Reactive Ion Etching of Silicon Using SF 6 / O 2 / CHF 3 Gas Mixtures;Journal of The Electrochemical Society;1995-06-01

5. Smooth etching of single crystal 6H‐SiC in an electron cyclotron resonance plasma reactor;Applied Physics Letters;1994-04-25

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