What is the role of the metal on the Fermi-level position at the interface with IV-IV compounds?-Reference-Cited by-同舟云学术

What is the role of the metal on the Fermi-level position at the interface with IV-IV compounds?

Published:1997-11 Issue: Volume:37-38 Page:573-579
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Aubry-Fortuna V.,Perrossier J.-L.,Mamor M.,Meyer F.,Frojdh C.,Thungstrom G.,Petersson C.S.,Bodnar S.,Regolini J.L.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Properties of Strained and Relaxed Silicon Germanium,1995

2. VLSI Electronics, Microstructure Science: Metal-semiconductor Contacts and Devices;Cohen,1986

3. Electrical properties and Schottky barriers of metal-semiconductor interfaces;Aboelfotoh,1990

4. Schottky barrier heights on IV-IV compound semiconductors;Meyer;Journal of Electronic Materials,1996

5. Metal-semiconductor junctions on p-type strained Si1−xGex layers;Nur;Appl. Phys. Lett.,1996

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